| No. |
Part Name |
Description |
Manufacturer |
| 541 |
1S417 |
Diffused silicon rectifier 3A 800V |
Texas Instruments |
| 542 |
1S417R |
Diffused silicon rectifier 3A 800V, reverse polarity |
Texas Instruments |
| 543 |
1S419 |
Diffused silicon rectifier 3A 1000V |
Texas Instruments |
| 544 |
1S419R |
Diffused silicon rectifier 3A 1000V, reverse polarity |
Texas Instruments |
| 545 |
1S420 |
Diffused silicon rectifier 10A 100V |
Texas Instruments |
| 546 |
1S420R |
Diffused silicon rectifier 10A 100V, reverse polarity |
Texas Instruments |
| 547 |
1S421 |
Diffused silicon rectifier 10A 200V |
Texas Instruments |
| 548 |
1S421R |
Diffused silicon rectifier 10A 200V, reverse polarity |
Texas Instruments |
| 549 |
1S423 |
Diffused silicon rectifier 10A 400V |
Texas Instruments |
| 550 |
1S423R |
Diffused silicon rectifier 10A 400V, reverse polarity |
Texas Instruments |
| 551 |
1S425 |
Diffused silicon rectifier 10A 600V |
Texas Instruments |
| 552 |
1S425R |
Diffused silicon rectifier 10A 600V, reverse polarity |
Texas Instruments |
| 553 |
1S427 |
Diffused silicon rectifier 10A 800V |
Texas Instruments |
| 554 |
1S427R |
Diffused silicon rectifier 10A 800V, reverse polarity |
Texas Instruments |
| 555 |
1S920 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 556 |
1S920 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 557 |
1S921 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 558 |
1S921 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 559 |
1S922 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 560 |
1S922 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 561 |
1S923 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 562 |
1S923 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 563 |
2020-100 |
Delay 100 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 564 |
2020-1000 |
Delay 1000 +/-20 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 565 |
2020-1100 |
Delay 1100 +/-22 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 566 |
2020-1200 |
Delay 1200 +/-24 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 567 |
2020-1300 |
Delay 1300 +/-26 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 568 |
2020-1400 |
Delay 1400 +/-28 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 569 |
2020-150 |
Delay 150 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 570 |
2020-1500 |
Delay 1500 +/-30 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| | | |
