No. |
Part Name |
Description |
Manufacturer |
631 |
2KBP10M |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
632 |
2KBP10M |
IN-LINE GLASS PASSIVATED SINGLE PHASE RECTIFIER BRIDGE |
TRSYS |
633 |
2KBP10M |
Glass Passivated Single-Phase Bridge Rectifier, Forward Current 2.0 A |
Vishay |
634 |
2KBPO1G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
635 |
2KBPO2G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
636 |
2KBPO4G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
637 |
2KBPO6G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
638 |
2KBPO86 |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
639 |
2KBPOO5G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
640 |
2N1491 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
641 |
2N1492 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
642 |
2N1493 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
643 |
2N1595 |
PNPN Diffused Silicon Thyristor (S.C.R.) 1A 50V |
Texas Instruments |
644 |
2N1596 |
PNPN Diffused Silicon Thyristor (S.C.R.) 1A 100V |
Texas Instruments |
645 |
2N1597 |
PNPN Diffused Silicon Thyristor (S.C.R.) 1A 200V |
Texas Instruments |
646 |
2N1598 |
PNPN Diffused Silicon Thyristor (S.C.R.) 1A 300V |
Texas Instruments |
647 |
2N1599 |
PNPN Diffused Silicon Thyristor (S.C.R.) 1A 400V |
Texas Instruments |
648 |
2N2586 |
NPN Darlington-Connected Silicon Transistor |
Texas Instruments |
649 |
2N5038 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
650 |
2N5039 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
651 |
2N5525 |
NPN Darlington-Connected silicon transistor |
Texas Instruments |
652 |
2N5526 |
NPN Darlington-Connected silicon transistor |
Texas Instruments |
653 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
654 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
655 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
656 |
2N5921 |
5W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
657 |
2N6032 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
658 |
2N6033 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
659 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
660 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
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