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Datasheets for ERAL EL

Datasheets found :: 958
Page: | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 | 23 |
No. Part Name Description Manufacturer
541 GES5817 Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. General Electric Solid State
542 GES5818 Planar passivated epitaxial NPN silicon transistor. 40V, 750mA. General Electric Solid State
543 GES5819 Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. General Electric Solid State
544 GES6027 PROGRAMMABLE UNIJUNCTION TRANSISTOR General Electric Solid State
545 GES6028 PROGRAMMABLE UNIJUNCTION TRANSISTOR General Electric Solid State
546 GET4870 Silicon unijunction transistor. 30V, 50mA. General Electric Solid State
547 GET4871 Silicon unijunction transistor. 30V, 50mA. General Electric Solid State
548 H11A5100 H11A520 H11A550 H11A5100 General Electric Solid State
549 H11A520 H11A520 H11A550 H11A5100 General Electric Solid State
550 H11A550 H11A520 H11A550 H11A5100 General Electric Solid State
551 H11B255 Photon coupled isolator. Ga As infrared emitting diode & NPN silicon photo-darlington amplifier. General Electric Solid State
552 H23A1 MATCHED EMITTED DETECTOR General Electric Solid State
553 H23A2 MATCHED EMITTED DETECTOR General Electric Solid State
554 H23B1 MATCHED EMITTER DETECTOR PAIR General Electric Solid State
555 H23L1 Matched Emitter-Detector Pair H23L1 General Electric Solid State
556 H74A1 PHOTON COUPLED ISOLATOR General Electric Solid State
557 ICL7605 High Reliability Commutating Auto-Zero Instrumentaion Amplifier General Electric Solid State
558 ICL8007 High Reliability JFET Input Operational Amplifier General Electric Solid State
559 ICL8022 (ICL8021/ICL8023) Low Power Bipolar Operational Amplifier General Electric Solid State
560 IRF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. General Electric Solid State
561 IRF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. General Electric Solid State
562 IRF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. General Electric Solid State
563 IRF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. General Electric Solid State
564 IRF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. General Electric Solid State
565 IRF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. General Electric Solid State
566 IRF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. General Electric Solid State
567 IRF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. General Electric Solid State
568 IRF150 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
569 IRF151 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
570 IRF152 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State


Datasheets found :: 958
Page: | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 | 23 |



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