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Datasheets for ERAL EL

Datasheets found :: 958
Page: | 18 | 19 | 20 | 21 | 22 | 23 | 24 | 25 | 26 |
No. Part Name Description Manufacturer
631 IRF642 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State
632 IRF720 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
633 IRF721 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
634 IRF722 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
635 IRF723 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
636 IRF730 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
637 IRF731 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
638 IRF732 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
639 IRF733 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
640 IRF820 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
641 IRF821 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
642 IRF822 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
643 IRF823 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
644 IRF830 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
645 IRF831 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
646 IRF832 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
647 IRF833 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
648 IRFD112 Power MOSFET field effect power transistor. General Electric Solid State
649 IRFD113 Power MOSFET field effect power transistor. General Electric Solid State
650 IRFF110 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. General Electric Solid State
651 IRFF111 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A. General Electric Solid State
652 IRFF112 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. General Electric Solid State
653 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. General Electric Solid State
654 IRFF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A. General Electric Solid State
655 IRFF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. General Electric Solid State
656 IRFF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. General Electric Solid State
657 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. General Electric Solid State
658 IRFF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. General Electric Solid State
659 IRFF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. General Electric Solid State
660 IRFF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. General Electric Solid State


Datasheets found :: 958
Page: | 18 | 19 | 20 | 21 | 22 | 23 | 24 | 25 | 26 |



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