DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for FIELD-EFFECT TRA

Datasheets found :: 1196
Page: | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 | 23 |
No. Part Name Description Manufacturer
541 2N6453 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
542 2N6454 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
543 2N6454 N-Channel Silicon Junction Field-Effect Transistor Texas Instruments
544 2N6550 N-Channel silicon junction field-effect transistor InterFET Corporation
545 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
546 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
547 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
548 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
549 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
550 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
551 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
552 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
553 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
554 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
555 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
556 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
557 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
558 2N7000 N-channel enhancement mode field-effect transistor Philips
559 2N7002 N-channel enhancement mode field-effect transistor Philips
560 2SJ11 Field-effect transistor TOSHIBA
561 2SJ12 Field-effect transistor TOSHIBA
562 2SJ125 150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. Isahaya Electronics Corporation
563 2SJ13 Field-effect transistor TOSHIBA
564 2SJ498 450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. Isahaya Electronics Corporation
565 2SK0658 Field-effect Transistor - Silicon N Channel MOS Type Panasonic
566 2SK105 N-Channel silicon junction field-effect transistor InterFET Corporation
567 2SK113 N-Channel silicon junction field-effect transistor InterFET Corporation
568 2SK152 N-Channel silicon junction field-effect transistor InterFET Corporation
569 2SK2880 450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. Isahaya Electronics Corporation
570 2SK363 N-Channel silicon junction field-effect transistor InterFET Corporation


Datasheets found :: 1196
Page: | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 | 23 |



© 2024 - www Datasheet Catalog com