| No. |
Part Name |
Description |
Manufacturer |
| 631 |
3N161 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
| 632 |
3N161 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 633 |
3N163 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 634 |
3N164 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 635 |
3N169 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 636 |
3N170 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 637 |
3N171 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 638 |
3N174 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 639 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 640 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
| 641 |
3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Vaishali Semiconductor |
| 642 |
3N200 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 643 |
3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Intersil |
| 644 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
| 645 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 646 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 647 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 648 |
3N204 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 649 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 650 |
3N205 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 651 |
3N205 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 652 |
3N206 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 653 |
3N206 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 654 |
3N207 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 655 |
3N208 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 656 |
3N209 |
N-Channel Dual Gate silicon-nitride passivated MOS Field-Effect Transistor |
Motorola |
| 657 |
3N210 |
N-Channel Dual Gate silicon-nitride passivated MOS Field-Effect Transistor |
Motorola |
| 658 |
3N211 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 659 |
3N212 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 660 |
3N213 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
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