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Datasheets for H POWE

Datasheets found :: 19119
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No. Part Name Description Manufacturer
541 2SK3299-ZJ-E2 N-ch Power MOS FET NEC
542 2SK3307 Nch power MOS FET NEC
543 2SK3354-ZJ Nch power MOS FET NEC
544 2SK3402 Nch power MOS FET NEC
545 2SK3402-Z Nch power MOS FET NEC
546 2SK3454 Nch power MOS FET (Switching) NEC
547 2SK3467 Nch power MOS FET (Switching) NEC
548 2SK3467-Z Nch power MOS FET (Switching) NEC
549 2SK3467-ZK Nch power MOS FET (Switching) NEC
550 2STA1695 High power PNP epitaxial planar bipolar transistor ST Microelectronics
551 2STA1943 High power PNP epitaxial planar bipolar transistor ST Microelectronics
552 2STC5242 High power NPN epitaxial planar bipolar transistor ST Microelectronics
553 300U10A High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices America Semiconductor
554 300U10AR High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices America Semiconductor
555 300U160A High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices America Semiconductor
556 300U160AR High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices America Semiconductor
557 300U200A High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices America Semiconductor
558 300U200AR High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices America Semiconductor
559 300U20A High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices America Semiconductor
560 300U20AR High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices America Semiconductor
561 300U30A High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices America Semiconductor
562 300U30AR High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices America Semiconductor
563 300U40A High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices America Semiconductor
564 300U40AR High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices America Semiconductor
565 300U60A High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices America Semiconductor
566 300U60AR High Power Standard Recovery Rectifiers - DO8 & DO9 Stud Devices America Semiconductor
567 3135-14 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
568 3135-25 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
569 3135-25N High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
570 3135-35 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics


Datasheets found :: 19119
Page: | 15 | 16 | 17 | 18 | 19 | 20 | 21 | 22 | 23 |



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