| No. |
Part Name |
Description |
Manufacturer |
| 631 |
70HF120 |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 632 |
70HF120R |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 633 |
70HF140 |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 634 |
70HF140R |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 635 |
70HF160 |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 636 |
70HF160R |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 637 |
70HF20 |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 638 |
70HF20R |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 639 |
70HF60 |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 640 |
70HF60R |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 641 |
70HF80 |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 642 |
70HF80R |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 643 |
74LVXZ161284 |
Low Voltage IEEE 161284 Translating Transceiver with Power-Up Protection |
Fairchild Semiconductor |
| 644 |
80610-18 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
| 645 |
80610-50 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 646 |
8114A |
High Power Pulse Generator, 100V / 2A |
Agilent (Hewlett-Packard) |
| 647 |
81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 648 |
81175M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 649 |
81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 650 |
81550M |
High power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 651 |
81600M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 652 |
82325-40 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 653 |
82729-30 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 654 |
82729-60 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 655 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 656 |
82931-55 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 657 |
82931-55N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 658 |
82931-55S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 659 |
8481B |
8481B High Power Sensor, 10 MHz to 18 GHz, 25W |
Agilent (Hewlett-Packard) |
| 660 |
8481H |
8481H Power Sensor, 10 MHz to 18 GHz, 3W |
Agilent (Hewlett-Packard) |
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