| No. |
Part Name |
Description |
Manufacturer |
| 541 |
2SA1873 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 542 |
2SA1881 |
PNP Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 543 |
2SA1882 |
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 544 |
2SA1953 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application |
TOSHIBA |
| 545 |
2SA1954 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application |
TOSHIBA |
| 546 |
2SA1955 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application |
TOSHIBA |
| 547 |
2SA1963 |
PNP Epitaxial Planar Silicon Transistor High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications |
SANYO |
| 548 |
2SA2029FHA |
PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 549 |
2SA2029FHAT2L |
PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 550 |
2SA2029M3 |
PNP General Purpose Amplifier Transistor |
ON Semiconductor |
| 551 |
2SA2029T2L |
PNP General Purpose Amplification Transistor |
ROHM |
| 552 |
2SA2063 |
General-Purpose Amplifier Transistors |
SANYO |
| 553 |
2SA564 |
Low Level and General Purpose Amplifiers |
Micro Electronics |
| 554 |
2SA608 |
Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 555 |
2SA608N |
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 556 |
2SA640 |
PNP silicon transistor designed for use in AF low noise amplifier of STEREOSET, RADIO and TAPE RECORDER |
NEC |
| 557 |
2SA733 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 558 |
2SA750 |
PNP silicon transistor designed for use in AF low noise amplifier of high-class STEREOSET, RADIO and TAPERECORDER |
NEC |
| 559 |
2SA812 |
AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 560 |
2SA9015 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
| 561 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 562 |
2SAR522EB |
PNP General Purpose Amplification Transistor |
ROHM |
| 563 |
2SAR522EBTL |
PNP General Purpose Amplification Transistor |
ROHM |
| 564 |
2SAR522M |
PNP General Purpose Amplification Transistor |
ROHM |
| 565 |
2SAR522MT2L |
PNP General Purpose Amplification Transistor |
ROHM |
| 566 |
2SAR522UB |
PNP General Purpose Amplification Transistor |
ROHM |
| 567 |
2SAR522UBTL |
PNP General Purpose Amplification Transistor |
ROHM |
| 568 |
2SAR523EB |
PNP General Purpose Amplification Transistor |
ROHM |
| 569 |
2SAR523EBTL |
PNP General Purpose Amplification Transistor |
ROHM |
| 570 |
2SAR523M |
PNP General Purpose Amplification Transistor |
ROHM |
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