| No. |
Part Name |
Description |
Manufacturer |
| 571 |
2SAR523MT2L |
PNP General Purpose Amplification Transistor |
ROHM |
| 572 |
2SAR523UB |
PNP General Purpose Amplification Transistor |
ROHM |
| 573 |
2SAR523UBTL |
PNP General Purpose Amplification Transistor |
ROHM |
| 574 |
2SB1295 |
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 575 |
2SB1651 |
For low-frequency and low-noise amplification |
Panasonic |
| 576 |
2SB1683 |
General-Purpose Amplifier Transistors |
SANYO |
| 577 |
2SB1709 |
Genera purpose amplification(−12V, −1.5A) |
ROHM |
| 578 |
2SB1732 |
Genera purpose amplification(−12V, −1.5A) |
ROHM |
| 579 |
2SB439 |
Germanium PNP alloy junction transistor, low noise amplifier applications |
TOSHIBA |
| 580 |
2SB440 |
Germanium PNP alloy junction transistor, low noise amplifier applications |
TOSHIBA |
| 581 |
2SB633P |
General-Purpose Amplifier Transistors |
SANYO |
| 582 |
2SB73 |
Germanium Transistor PNP Alloyed Junction Audio Frequency Low Noise Amplifier |
Hitachi Semiconductor |
| 583 |
2SB814 |
Si PNP epitaxial planar high voltage, low-noise amplifier |
Panasonic |
| 584 |
2SB817P |
General-Purpose Amplifier Transistors |
SANYO |
| 585 |
2SC1199 |
Silicon NPN epitaxial planar transistor, RF Wide-Band low-noise amplifier |
TOSHIBA |
| 586 |
2SC1222 |
NPN silicon transistor designed for use in AF low noise amplifier |
NEC |
| 587 |
2SC1222 |
Transistors LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
| 588 |
2SC1335 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
Unknow |
| 589 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
| 590 |
2SC1623 |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 591 |
2SC1685 |
Low Level and General Purpose Amplifiera |
Micro Electronics |
| 592 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 593 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 594 |
2SC1815L |
TRANSISTOR (AUDIO FREQUENCY VOLTAGE/ LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 595 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 596 |
2SC2107 |
NPN Silicon Epitaxial Transistor, Industrial Use, General Purpose Amplifier and Switches |
NEC |
| 597 |
2SC2148 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 598 |
2SC2149 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 599 |
2SC2350 |
NPN silicon epitaxial transistor, high frequency low noise amplifier |
NEC |
| 600 |
2SC2351 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| | | |
