| No. |
Part Name |
Description |
Manufacturer |
| 541 |
2N5946 |
450-512MHz CLASS C 12.5V 10W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
| 542 |
2N6483 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 543 |
2N6483 |
N-Channel FETs - low frequency - low noise dual JFETs |
National Semiconductor |
| 544 |
2N6484 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 545 |
2N6484 |
N-Channel FETs - low frequency - low noise dual JFETs |
National Semiconductor |
| 546 |
2N6485 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 547 |
2N6485 |
N-Channel FETs - low frequency - low noise dual JFETs |
National Semiconductor |
| 548 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
| 549 |
2N706 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 550 |
2N834 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 551 |
2N835 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 552 |
2N914 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 553 |
2N918 |
NPN low noise transistor |
FERRANTI |
| 554 |
2N918 |
RF NPN transistor for VHF low noise amplifier |
IPRS Baneasa |
| 555 |
2N929 |
NPN low noise transistor |
FERRANTI |
| 556 |
2N929 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 557 |
2N929 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 558 |
2N929 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 559 |
2N929A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 560 |
2N930 |
Low Noise NPN Transistor |
CCSIT-CE |
| 561 |
2N930 |
NPN low noise transistor |
FERRANTI |
| 562 |
2N930 |
Low level, low noise NPN transistor |
ICCE |
| 563 |
2N930 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
| 564 |
2N930 |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 565 |
2N930 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 566 |
2N930 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 567 |
2N930A |
NPN silicon annular transistors for low-level, low noise amplifier applications |
Motorola |
| 568 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 569 |
2SA1048(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications |
TOSHIBA |
| 570 |
2SA1245 |
Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
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