| No. |
Part Name |
Description |
Manufacturer |
| 601 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
| 602 |
2SC1570 |
VERY LOW NIOSE AMP APPLICATIONS |
SANYO |
| 603 |
2SC1571 |
VERY LOW NIOSE AMP APPLICATIONS |
SANYO |
| 604 |
2SC1571L |
VERY LOW NIOSE AMP APPLICATIONS |
SANYO |
| 605 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 606 |
2SC1815L |
TRANSISTOR (AUDIO FREQUENCY VOLTAGE/ LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 607 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 608 |
2SC2148 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 609 |
2SC2149 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 610 |
2SC2240 |
Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications |
TOSHIBA |
| 611 |
2SC2350 |
NPN silicon epitaxial transistor, high frequency low noise amplifier |
NEC |
| 612 |
2SC2351 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 613 |
2SC2458(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications Low Noise Audio Amplifier Applications |
TOSHIBA |
| 614 |
2SC2458L |
TRANSISTOR (AUDIO/ LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 615 |
2SC2498 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 616 |
2SC2570A |
High-Frequency Low Noise transistors for VHF-and UHF band application of 2SC2570A - Application Note |
NEC |
| 617 |
2SC2570A |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 618 |
2SC2570A-T |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 619 |
2SC2737 |
NPN silicon transistor designed for low noise amplifier of VHF/UHF band |
NEC |
| 620 |
2SC2753 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 621 |
2SC2869 |
Low Noise Amplifier of VHF & UHF band |
NEC |
| 622 |
2SC2954-T1 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 623 |
2SC2954-T2 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 624 |
2SC3011 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 625 |
2SC3098 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 626 |
2SC3099 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 627 |
2SC3268 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 628 |
2SC3302 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
| 629 |
2SC3324 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 630 |
2SC3329 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers |
TOSHIBA |
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