| No. |
Part Name |
Description |
Manufacturer |
| 5461 |
301Y-02 |
CASE DIMENSIONS |
Motorola |
| 5462 |
303-01 |
Motorola case, dimensions, similar with .100 CERAMIC |
Motorola |
| 5463 |
303A-01 |
Case dimensions |
Motorola |
| 5464 |
305-01 |
Motorola case, dimensions, similar with .204 STUD |
Motorola |
| 5465 |
305-01 |
CASE DIMENSIONS |
Motorola |
| 5466 |
305A-01 |
Motorola case, dimensions, similar with .204 PILL |
Motorola |
| 5467 |
305A-01 |
CASE DIMENSIONS |
Motorola |
| 5468 |
305B-01 |
Motorola case, dimensions, similar with .200 SOE |
Motorola |
| 5469 |
305B-02 |
CASE DIMENSIONS |
Motorola |
| 5470 |
305C-01 |
Motorola case, dimensions, similar with .200 SOE NS |
Motorola |
| 5471 |
305C-02 |
CASE DIMENSIONS |
Motorola |
| 5472 |
305D-01 |
CASE DIMENSIONS |
Motorola |
| 5473 |
306-04 |
Outline dimensions case |
Motorola |
| 5474 |
30A01C |
PNP Bipolar Transistor for Audio Power Amplifier Applications |
ON Semiconductor |
| 5475 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5476 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5477 |
30KW108 |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5478 |
30KW108A |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5479 |
30KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5480 |
30KW120A |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5481 |
30KW132 |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5482 |
30KW132A |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5483 |
30KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5484 |
30KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5485 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5486 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5487 |
30KW168 |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5488 |
30KW168A |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5489 |
30KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5490 |
30KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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