| No. |
Part Name |
Description |
Manufacturer |
| 5491 |
30KW198 |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5492 |
30KW198A |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5493 |
30KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5494 |
30KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5495 |
30KW240 |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5496 |
30KW240A |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5497 |
30KW258 |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5498 |
30KW258A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5499 |
30KW270 |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5500 |
30KW270A |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5501 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5502 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 5503 |
30L6P45 |
RECTIFIER MODULE SILICON DIFFUSED TYPE ( THREE PHASE FULL WAVE BRIDGE APPLICATIONS) |
TOSHIBA |
| 5504 |
30Q6P45 |
RECTIFIER MODULE SILICON DIFFUSED TYPE ( THREE PHASE FULL WAVE BRIDGE APPLICATIONS) |
TOSHIBA |
| 5505 |
310B |
SINGLE-CHANNEL AUDIO |
Fiber Options |
| 5506 |
310B-R |
SINGLE-CHANNEL AUDIO |
Fiber Options |
| 5507 |
310B-T |
SINGLE-CHANNEL AUDIO |
Fiber Options |
| 5508 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 5509 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 5510 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 5511 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 5512 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 5513 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 5514 |
316-01 |
CASE DIMENSIONS |
Motorola |
| 5515 |
3161 |
HALL-EFFECT SWITCH FOR 2-WIRE APPLICATIONS |
Allegro MicroSystems |
| 5516 |
316A-01 |
Motorola case, dimensions, similar with .500 J ZERO |
Motorola |
| 5517 |
316A-01 |
CASE DIMENSIONS |
Motorola |
| 5518 |
316C-01 |
Motorola case, dimensions, similar with .500 CQ |
Motorola |
| 5519 |
317-01 |
Case dimensions |
Motorola |
| 5520 |
317-01 |
Motorola case, dimensions, similar with MACRO-X |
Motorola |
| | | |
