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Datasheets for IONS

Datasheets found :: 37485
Page: | 184 | 185 | 186 | 187 | 188 | 189 | 190 | 191 | 192 |
No. Part Name Description Manufacturer
5611 397-01 Motorola case, dimensions, similar with HPA-1 Motorola
5612 3970-TYPE 1550 nm transmitter. Connector options: FC/APC bulkhead, tight key;SC/APC bulkhead; E-2000/APC bulkhead. Agere Systems
5613 398-01 Motorola case, dimensions, similar with BMA-4 Motorola
5614 398-02 CASE DIMENSIONS Motorola
5615 3BH41 FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) TOSHIBA
5616 3BZ41 RECTIFIER SILICON DIFFUSED TYPE (GENERAL PURPOSE RECTIFIER APPLICATIONS) TOSHIBA
5617 3DL41 EPITAXIAL JUNCTION TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) TOSHIBA
5618 3DL41A EPITAXIAL JUNCTION TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) TOSHIBA
5619 3DNOW AND MMX AMD Extensions to the 3DNow! and MMX Instruction Sets Manual Advanced Micro Devices
5620 3DU41 SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) TOSHIBA
5621 3DZ41 SILICON DIFFUSED TYPE (GENERAL PURPOSE RECTFIER APPLICATIONS) TOSHIBA
5622 3FWJ42N SCHOTTKY BARRIER DIODE (HIGH SPEED RECTIFIER APPLICATIONS) TOSHIBA
5623 3GH45 SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) TOSHIBA
5624 3GU41 SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) TOSHIBA
5625 3GWJ42 SCHOTTKY BARRIER TYPE (HIGH SPEED RECTIFIER APPLICATIONS) TOSHIBA
5626 3GWJ42C N SCHOTTKY BARRIEF TYPE (HIGH SPEED RECTIFIER APPLICATIONS) TOSHIBA
5627 3JH45 SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) TOSHIBA
5628 3JU41 SILICON DIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS) TOSHIBA
5629 3LN01M Ultrahigh-Speed Switching Applications SANYO
5630 3LN01S Ultrahigh-Speed Switching Applications SANYO
5631 3LN03SS General-Purpose Switching Device Applications SANYO
5632 3LP01C Ultrahigh-Speed Switching Applications SANYO
5633 3N155 P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
5634 3N155A P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
5635 3N156 P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
5636 3N156A P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications Motorola
5637 3N200 MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz RCA Solid State
5638 3N209 Dual-gate MOSFET UHF communications N-Channel - Depletion Motorola
5639 3N209 N-channel-defletion dual-gate MOSFET UHF communications. Motorola
5640 3NH41 SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPLY APPLICATIONS) TOSHIBA


Datasheets found :: 37485
Page: | 184 | 185 | 186 | 187 | 188 | 189 | 190 | 191 | 192 |



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