| No. |
Part Name |
Description |
Manufacturer |
| 5611 |
2SA1266L |
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE |
Korea Electronics (KEC) |
| 5612 |
2SA1270 |
Transistors |
Korea Electronics (KEC) |
| 5613 |
2SA1271 |
SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE |
Korea Electronics (KEC) |
| 5614 |
2SA1273 |
Silicon PNP Transistor Epitaxial Planar Type(PCT PROCESS) |
Korea Electronics (KEC) |
| 5615 |
2SA1282 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5616 |
2SA1282A |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5617 |
2SA1283 |
SILICON PNP 2SA1283 |
Isahaya Electronics Corporation |
| 5618 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 5619 |
2SA1285 |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5620 |
2SA1285A |
FOR PRE-DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5621 |
2SA1286 |
SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5622 |
2SA1287 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5623 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
| 5624 |
2SA1364 |
SILICON PNP TRANSISTOR |
Isahaya Electronics Corporation |
| 5625 |
2SA1365 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5626 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 5627 |
2SA1368 |
2SA1368 |
Isahaya Electronics Corporation |
| 5628 |
2SA1369 |
FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5629 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
| 5630 |
2SA1399 |
SILICON PNP TRANSISTOR |
Isahaya Electronics Corporation |
| 5631 |
2SA1530A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5632 |
2SA1602 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE (SUPER MINI TYPE) |
Isahaya Electronics Corporation |
| 5633 |
2SA1664 |
SOT-89 Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
| 5634 |
2SA1703 |
PNP Epitaxial Planar Silicon Transistor Low-Frequency Amplifier, Electronic Governor Applications |
SANYO |
| 5635 |
2SA1928 |
SILICON PNP DUAL TRANSISTOR |
Isahaya Electronics Corporation |
| 5636 |
2SA1944 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5637 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5638 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5639 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
| 5640 |
2SA1947 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
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