Datasheets for LECTRONIC

Datasheets found :: 190433

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No.	Part Name	Description	Manufacturer
5701	2SC2920	Silicon High Speed Power Transistor	Fujitsu Microelectronics
5702	2SC2964	Silicon High Speed Power Transistor	Fujitsu Microelectronics
5703	2SC2964	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5704	2SC2965	Silicon High Speed Power Transistor	Fujitsu Microelectronics
5705	2SC2965	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5706	2SC3044	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5707	2SC3044A	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5708	2SC3045	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5709	2SC3046	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5710	2SC3052	LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE	Isahaya Electronics Corporation
5711	2SC3053	150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710	Isahaya Electronics Corporation
5712	2SC3055	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5713	2SC3056	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5714	2SC3056A	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5715	2SC3057	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5716	2SC3058	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5717	2SC3058A	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5718	2SC3059	Silicon High Speed Power Transistor	Fujitsu Microelectronics
5719	2SC3060	Silicon High Speed Power Transistor	Fujitsu Microelectronics
5720	2SC3061	Silicon High Speed Power Transistor	Fujitsu Microelectronics
5721	2SC3178	Silicon High Speed Power Transistor	Fujitsu Microelectronics
5722	2SC3198	Transistors	Korea Electronics (KEC)
5723	2SC3198L	SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)	Korea Electronics (KEC)
5724	2SC3200	SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)	Korea Electronics (KEC)
5725	2SC3201	SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)	Korea Electronics (KEC)
5726	2SC3202	SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)	Korea Electronics (KEC)
5727	2SC3202	SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)	Korea Electronics (KEC)
5728	2SC3203	SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)	Korea Electronics (KEC)
5729	2SC3206	SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)	Korea Electronics (KEC)
5730	2SC3242	900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282	Isahaya Electronics Corporation

Datasheets found :: 190433

Page: | 187 | 188 | 189 | 190 | 191 | 192 | 193 | 194 | 195 |