| No. |
Part Name |
Description |
Manufacturer |
| 5821 |
2SC828 |
Low Level and General Purpose Amplifier |
Micro Electronics |
| 5822 |
2SC945 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 5823 |
2SD1047 |
High power NPN epitaxial planar bipolar transistor |
ST Microelectronics |
| 5824 |
2SD1391 |
RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS |
ST Microelectronics |
| 5825 |
2SD1398 |
RF & microwave transistor 850-960 MHz applications, 24 volts, 53W |
SGS Thomson Microelectronics |
| 5826 |
2SD1398 |
RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS |
ST Microelectronics |
| 5827 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
SGS Thomson Microelectronics |
| 5828 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
ST Microelectronics |
| 5829 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
| 5830 |
2SD1616A |
NPN SILICON TRANSISTOR |
Micro Electronics |
| 5831 |
2SD1619 |
LF Amplifier, Electronic Governor Applications |
SANYO |
| 5832 |
2SD1899 |
TO-252 Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
| 5833 |
2SD1899-Z |
TO-252 Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
| 5834 |
2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. |
Isahaya Electronics Corporation |
| 5835 |
2SD2012 |
NPN SILICON POWER TRANSISTOR |
ST Microelectronics |
| 5836 |
2SD400 |
Low-Frequency Power Amp, Electronic Governor Applications |
SANYO |
| 5837 |
2SD471 |
SILICON TRANSISTORS |
Micro Electronics |
| 5838 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
| 5839 |
2SD545 |
FOR AUDIO FREQUENCY POWER AMP, CONVERTERS, ELECTRONIC GOVERNORS |
SANYO |
| 5840 |
2SD560 |
SILICON NPN EPITAXIAL DARLINGTON TRANSISTOR (5 AMP/ 100 VOLT) |
Fujitsu Microelectronics |
| 5841 |
2SD570 |
Power Transistors |
Micro Electronics |
| 5842 |
2SD592 |
SILICON TRANSISTORS |
Micro Electronics |
| 5843 |
2SD592A |
SILICON TRANSISTORS |
Micro Electronics |
| 5844 |
2SD734 |
NPN Epitaxial Planar Silicon Transistor 1W AF Output, Electronic Governor, DC-DC Converter Applications |
SANYO |
| 5845 |
2SD882 |
NPN medium power transistor |
ST Microelectronics |
| 5846 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 5847 |
2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 5848 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 5849 |
2SK19 |
N-CHANNEL SILICON FET |
Micro Electronics |
| 5850 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
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