DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for TH

Datasheets found :: 135135
Page: | 185 | 186 | 187 | 188 | 189 | 190 | 191 | 192 | 193 |
No. Part Name Description Manufacturer
5641 7B47-S-09-1 Isolated Linearized Thermocouple Input Signal Conditioning Module Analog Devices
5642 7B47-S-09-2 Isolated Linearized Thermocouple Input Signal Conditioning Module Analog Devices
5643 7B47-T-05-1 Isolated Linearized Thermocouple Input Signal Conditioning Module Analog Devices
5644 7B47-T-05-2 Isolated Linearized Thermocouple Input Signal Conditioning Module Analog Devices
5645 7B47-T-06-1 Isolated Linearized Thermocouple Input Signal Conditioning Module Analog Devices
5646 7B47-T-06-2 Isolated Linearized Thermocouple Input Signal Conditioning Module Analog Devices
5647 7EL2 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Power Innovations
5648 7MBR25SC120 PIM/Built-in converter with thyristor and brake (S series) 1200V / 25A / PIM Unknow
5649 8-1462000-5 2 pole telecom/signal relay Through Hole Type (THT) Non-polarized. non-latching 1 coil Tyco Electronics
5650 80-2 VHF 175MHz 7.5V 0.75W NPN RF Transistor SGS Thomson Microelectronics
5651 800 RECTIFIERS ASSEMBLIES THREE PHASE BRIDGES, 20-40 AMP, STANDARD HIGH EFFICIENCY, ESP Microsemi
5652 80064 Hermetically sealed NPN power transistor featuring a unique matrix structure SGS Thomson Microelectronics
5653 800D-5 D thermistor, 800Ohm SEMITEC
5654 80264 NPN power RF transistor designed for Class C linear applications 1-4GHz SGS Thomson Microelectronics
5655 80610-18 High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz SGS Thomson Microelectronics
5656 80610-18 High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz SGS Thomson Microelectronics
5657 80610-50 High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz SGS Thomson Microelectronics
5658 80610-50 High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz SGS Thomson Microelectronics
5659 80C32E Radiation Tolerant ROMless version of the 80C52 single chip 8-bit microcontroller. Atmel
5660 80C32MODULE Evaluation Kit for the MAX1407/MAX1408/MAX1409/MAX1414 MAXIM - Dallas Semiconductor
5661 80C32MODULE-DIP Evaluation Kit for the MAX1407, MAX1408, MAX1409, and MAX1414 MAXIM - Dallas Semiconductor
5662 80RIA PHASE CONTROL THYRISTORS International Rectifier
5663 80RIA120M Phase control thyristor International Rectifier
5664 81150M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
5665 81175M High Power pulsed transistor designed for DME/TACAN avionics applications SGS Thomson Microelectronics
5666 81300M High Power pulsed transistor designed for IFF avionics applications SGS Thomson Microelectronics
5667 81390M Transistor designed for IFF avionics applicatios SGS Thomson Microelectronics
5668 81406 28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band SGS Thomson Microelectronics
5669 81406 28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band SGS Thomson Microelectronics
5670 81410 28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band SGS Thomson Microelectronics


Datasheets found :: 135135
Page: | 185 | 186 | 187 | 188 | 189 | 190 | 191 | 192 | 193 |



© 2024 - www Datasheet Catalog com