| No. |
Part Name |
Description |
Manufacturer |
| 5701 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 5702 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 5703 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 5704 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 5705 |
8269 |
4-BIT comparator, is a functional and pin-for-pin replacement for the DM8200 |
Signetics |
| 5706 |
82729-30 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5707 |
82729-60 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5708 |
82731-1 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 5709 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 5710 |
82931-55 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5711 |
82931-55N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5712 |
82931-55S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 5713 |
82RIA120 |
Phase control thyristor |
International Rectifier |
| 5714 |
82RIA120M |
Phase control thyristor |
International Rectifier |
| 5715 |
83000 |
3.0GHz 0.5W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 5716 |
83001 |
3.0GHz 1.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 5717 |
83135-3 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 5718 |
833ET-1 |
ET thermistor, 83KOhm |
SEMITEC |
| 5719 |
833ET-2 |
ET thermistor, 83KOhm |
SEMITEC |
| 5720 |
887-1 |
Bussed thick film resistor network |
BI Technologies |
| 5721 |
887-3 |
Isolated thick film resistor network |
BI Technologies |
| 5722 |
887-5 |
Dual terminator thick film resistor network |
BI Technologies |
| 5723 |
887-6 |
SCSI thick film resistor network |
BI Technologies |
| 5724 |
888-1 |
Bussed thick film resistor network |
BI Technologies |
| 5725 |
888-3 |
Isolated thick film resistor network |
BI Technologies |
| 5726 |
888-5 |
Dual terminator thick film resistor network |
BI Technologies |
| 5727 |
888-6 |
SCSI thick film resistor network |
BI Technologies |
| 5728 |
893D |
Solid Tantalum Chip Capacitors, TANTAMOUNT®, Built-In-Fuse Miniature, Molded Case in Three Case Codes, Fusible, Meets EIA 535BAAC and IEC Specification QC300801/US0001, Automatic Pick and Place Compatible |
Vishay |
| 5729 |
900PE10 |
V(rrm/drm): 100V; 1410A RMS hockey puk thyristor |
International Rectifier |
| 5730 |
900PE20 |
V(rrm/drm): 200V; 1410A RMS hockey puk thyristor |
International Rectifier |
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