No. |
Part Name |
Description |
Manufacturer |
5701 |
PTF210451E |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
Infineon |
5702 |
PTF210901 |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
5703 |
PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
5704 |
PTF211301 |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
5705 |
PTF211301A |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
5706 |
PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
5707 |
PTF211802A |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
5708 |
PTF211802E |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
5709 |
Q62702-B118 |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) |
Siemens |
5710 |
Q62702-B372 |
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) |
Siemens |
5711 |
Q62702-F182 |
N-Channel junction field-Effect Transistors |
Siemens |
5712 |
Q62702-F205 |
N-Channel junction field-Effect Transistors |
Siemens |
5713 |
Q62702-F209 |
N-Channel junction field-Effect Transistors |
Siemens |
5714 |
Q62702-F219 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
5715 |
Q62702-F236 |
N-Channel junction field-Effect Transistors |
Siemens |
5716 |
Q62702-F250 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
5717 |
Q62702-F254 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
5718 |
Q62702-F393 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
5719 |
RFH35N08 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5720 |
RFH35N10 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5721 |
RFH45N05 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5722 |
RFH45N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5723 |
RFP15N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5724 |
RFP15N12 |
N-CHANNEL LOGIC LEVEL POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5725 |
RFP5P12 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5726 |
RFP5P15 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5727 |
RHY10 |
Hall-effect device measuring axial magnetic field |
Siemens |
5728 |
RHY11 |
Hall-effect device measuring axial magnetic field |
Siemens |
5729 |
RHY15 |
Ferrite Hall-effect device and Hall signal generator |
Siemens |
5730 |
RHY15R |
Ferrite Hall-effect device and Hall signal generator |
Siemens |
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