| No. |
Part Name |
Description |
Manufacturer |
| 5731 |
RHY17 |
Hall-effect device measuring magnetic field at low temperatures |
Siemens |
| 5732 |
RHY18 |
Hall-effect device measuring magnetic field at low temperatures |
Siemens |
| 5733 |
RHY18-S1 |
Hall-effect device measuring magnetic field at low temperatures |
Siemens |
| 5734 |
RHY19 |
Hall-effect devices for measuring AC und DC magnetic fields |
Siemens |
| 5735 |
RHY20 |
Ferrite Hall-effect device and Hall signal generator |
Siemens |
| 5736 |
ROS01 |
Low power P-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 5737 |
ROS02 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 5738 |
ROS04 |
Low power P-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 5739 |
ROS05 |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 5740 |
ROS05A |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 5741 |
ROS05B |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 5742 |
ROS05C |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 5743 |
ROS05D |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 5744 |
ROS7N |
N-Channel Junction Field-Effect Transistor |
CCSIT-CE |
| 5745 |
RVM35A1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5746 |
RVM35A2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5747 |
RVM35B1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5748 |
RVM35B2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5749 |
RVM60A1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5750 |
RVM60A2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5751 |
RVM60B1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5752 |
RVM60B2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5753 |
RW |
Vitreous Wirewound Resistors, All welded construction, Ceramic core, Models acc.MIL-R-26 available, Complete vitreous coating for perfect humidity protection, Adjustable and non inductive design available, TC 100...180ppm/K |
Vishay |
| 5754 |
S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): +-20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications |
TOSHIBA |
| 5755 |
S525 |
N-Channel MOS-Fieldeffect Triode/ Depletion Mode |
Vishay |
| 5756 |
S525T |
N-Channel MOS‐Fieldeffect Triode, Depletion Mode |
Vishay |
| 5757 |
S525TW |
N-Channel MOS‐Fieldeffect Triode, Depletion Mode |
Vishay |
| 5758 |
S5A1901H02 |
AUDIO EFFECT PROCESSOR |
Samsung Electronic |
| 5759 |
S5A1901H02 |
AUDIO EFFECT PROCESSOR Data Sheet |
Samsung Electronic |
| 5760 |
S5A1901H02-Q0R0 |
AUDIO EFFECT PROCESSOR |
Samsung Electronic |
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