| No. |
Part Name |
Description |
Manufacturer |
| 571 |
2SB368H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
| 572 |
2SB368H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
| 573 |
2SB415 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 574 |
2SB415 |
Germanium PNP alloy junction transistor, medium power amplifier applications |
TOSHIBA |
| 575 |
2SB421 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 576 |
2SB461 |
Germanium PNP alloy junction transistor, audio medium power amplifier, strobo flash applications |
TOSHIBA |
| 577 |
2SB55 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 578 |
2SB559 |
Low Frequency Power Amp, Medium Speed Switching Applications |
Unknow |
| 579 |
2SB56 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 580 |
2SB56A |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 581 |
2SB62 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 582 |
2SB63 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 583 |
2SB678 |
Silicon PNP epitaxial darlington medium power low frequency, medium speed switching transistor |
TOSHIBA |
| 584 |
2SB678 |
Silicon PNP epitaxial darlington medium power low frequency, medium speed switching transistor |
TOSHIBA |
| 585 |
2SB679 |
Silicon triple diffused darlington medium power low frequency transistor, complementary 2SD689 |
TOSHIBA |
| 586 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 587 |
2SC1252 |
NPN medium power UHF-VHF transistor (This datasheet of NE74114 is also the datasheet of 2SC1252, see the Electrical Characteristics table) |
NEC |
| 588 |
2SC1365 |
NPN medium power UHF-VHF transistor (This datasheet of NE74113 is also the datasheet of 2SC1365, see the Electrical Characteristics table) |
NEC |
| 589 |
2SC1426 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC1426, see the Electrical Characteristics table) |
NEC |
| 590 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 591 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 592 |
2SC1600 |
NPN medium power microwave transistor (This datasheet of NE57510 is also the datasheet of 2SC1600-Grd D, see the Electrical Characteristics table) |
NEC |
| 593 |
2SC1626 |
Silicon NPN epitaxial medium power transistor |
TOSHIBA |
| 594 |
2SC1707 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 595 |
2SC1707A |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 596 |
2SC1707AH |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 597 |
2SC1781 |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 598 |
2SC1781H |
HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
Hitachi Semiconductor |
| 599 |
2SC2025 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC2025, see the Electrical Characteristics table) |
NEC |
| 600 |
2SC2500 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
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