| No. |
Part Name |
Description |
Manufacturer |
| 601 |
2SC509G |
Silicon NPN epitaxial planar medium power transistor |
TOSHIBA |
| 602 |
2SC5103 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 603 |
2SC515 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 604 |
2SC5161 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 605 |
2SC5347 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications |
SANYO |
| 606 |
2SC5551 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier Applications |
SANYO |
| 607 |
2SC5720 |
Transistor Silicon NPN Epitaxial Planar Type MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS |
TOSHIBA |
| 608 |
2SC5730 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 609 |
2SC5765 |
Transistor Silicon NPN Epitaxial Planar Type MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS |
TOSHIBA |
| 610 |
2SC5824 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 611 |
2SC5866 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 612 |
2SC5916 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 613 |
2SC708AH |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
| 614 |
2SC708AH |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
| 615 |
2SC708H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
| 616 |
2SC708H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
| 617 |
2SC830H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
| 618 |
2SC830H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
| 619 |
2SC89H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 620 |
2SC907AH |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 621 |
2SC907H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 622 |
2SC90H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 623 |
2SC91H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 624 |
2SC984H |
Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 625 |
2SCR372P5 |
NPN 120V 700mA Medium Power Driver |
ROHM |
| 626 |
2SCR372P5T100 |
NPN 120V 700mA Medium Power Driver |
ROHM |
| 627 |
2SCR375P5 |
NPN 120V 1.5A Medium Power Transistor |
ROHM |
| 628 |
2SCR375P5T100 |
NPN 120V 1.5A Medium Power Transistor |
ROHM |
| 629 |
2SCR512P5 |
NPN 30V 2A Medium Power Transistor |
ROHM |
| 630 |
2SCR512P5T100 |
NPN 30V 2A Medium Power Transistor |
ROHM |
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