| No. |
Part Name |
Description |
Manufacturer |
| 571 |
FFPF60SA60DS |
8A, 600V Stealth Dual Series Diode |
Fairchild Semiconductor |
| 572 |
FFPF60SA60DSTU |
8A, 600V Stealth Dual Series Diode |
Fairchild Semiconductor |
| 573 |
FGA60N60UFD |
600V, 60A, Field Stop IGBT |
Fairchild Semiconductor |
| 574 |
FGA60N65SMD |
650V, 60A, Field Stop IGBT |
Fairchild Semiconductor |
| 575 |
FGH60N60SF |
600V, 60A, Field Stop IGBT |
Fairchild Semiconductor |
| 576 |
FGH60N60SFD |
600V, 60A, Field Stop IGBT |
Fairchild Semiconductor |
| 577 |
FGH60N60SMD |
600V, 60A, Field Stop IGBT |
Fairchild Semiconductor |
| 578 |
FGH60N60SM_F085 |
600V, 60A Field Stop IGBT |
Fairchild Semiconductor |
| 579 |
FGH60N60UFD |
600V, 60A, Field Stop IGBT |
Fairchild Semiconductor |
| 580 |
FGL60N100BNTD |
1000V, 60A NPT-Trench IGBT |
Fairchild Semiconductor |
| 581 |
FGL60N100BNTDTU |
1000V, 60A NPT-Trench IGBT |
Fairchild Semiconductor |
| 582 |
FS4UM-12 |
Power MOSFETs: FS Series, Medium Voltage, 600V |
Mitsubishi Electric Corporation |
| 583 |
FS70UMJ-06 |
Power MOSFETs: FS Series, Low Voltage, 60V |
Mitsubishi Electric Corporation |
| 584 |
FSJ055R3 |
70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
Intersil |
| 585 |
FSJ055R4 |
70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
Intersil |
| 586 |
FST10060 |
100A, 60V ultra fast recovery rectifier |
MCC |
| 587 |
FST12060 |
120A, 60V ultra fast recovery rectifier |
MCC |
| 588 |
FST16060 |
160A, 60V ultra fast recovery rectifier |
MCC |
| 589 |
FST7160SM |
70A, 60V ultra fast recovery rectifier |
MCC |
| 590 |
FST8060 |
80A, 60V ultra fast recovery rectifier |
MCC |
| 591 |
FST8160SM |
80A, 60V ultra fast recovery rectifier |
MCC |
| 592 |
FST8360SL |
80A, 60V ultra fast recovery rectifier |
MCC |
| 593 |
FST8460SL |
80A, 60V ultra fast recovery rectifier |
MCC |
| 594 |
FT500DL-12 |
Phase control SCR. 500A, 600V. |
Powerex Power Semiconductors |
| 595 |
G150SPBK06P3 |
150A, 600V IGBT with FWD Full Bridge configuration in a Hi-Rel INT-A-Pak 3 package |
International Rectifier |
| 596 |
G450HHBK06P2 |
450A, 600V IGBT with FWD half bridge configuration in a Hi-Rel INT-A-Pak2 package |
International Rectifier |
| 597 |
G903T63D |
3.3 V, 600 mA low dropout regulator |
Global Mixed-mode Technology |
| 598 |
G903T65D |
3.3 V, 600 mA low dropout regulator |
Global Mixed-mode Technology |
| 599 |
GES2904 |
Planar epitaxial PNP silicon transistor. 40V, 600mA. |
General Electric Solid State |
| 600 |
GES2904A |
Planar epitaxial PNP silicon transistor. 60V, 600mA. |
General Electric Solid State |
| | | |
