No. |
Part Name |
Description |
Manufacturer |
601 |
GES2905 |
Planar epitaxial PNP silicon transistor. 40V, 600mA. |
General Electric Solid State |
602 |
GES2905A |
Planar epitaxial PNP silicon transistor. 60V, 600mA. |
General Electric Solid State |
603 |
GM71C17400CJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
604 |
GM71C17400CT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
605 |
GM71C17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
606 |
GM71C17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
607 |
GM71C17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
608 |
GM71C17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
609 |
GM71C17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
610 |
GM71C17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
611 |
GM71C17800CT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
612 |
GM71C18163AJ-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
613 |
GM71C18163AT-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
614 |
GM71C18163CJ-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns |
Hynix Semiconductor |
615 |
GM71C18163CT-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns |
Hynix Semiconductor |
616 |
GM71CS17400CJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
617 |
GM71CS17400CLJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power |
Hynix Semiconductor |
618 |
GM71CS17400CLT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power |
Hynix Semiconductor |
619 |
GM71CS17400CT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
620 |
GM71CS17403CJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
621 |
GM71CS17403CLJ-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
622 |
GM71CS17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
623 |
GM71CS17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
624 |
GM71CS17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
625 |
GM71CS17800CLJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
626 |
GM71CS17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
627 |
GM71CS17800CT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
628 |
GM71CS18163ALJ-6 |
1,048,576 words x 16 bit DRAM, 60ns, low power |
LG Semiconductor |
629 |
GM71CS18163ALT-6 |
1,048,576 words x 16 bit DRAM, 60ns, low power |
LG Semiconductor |
630 |
GM71CS18163CLJ-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
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