| No. |
Part Name |
Description |
Manufacturer |
| 571 |
1N5372B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 572 |
1N5373B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 573 |
1N5374B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 574 |
1N5375B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 575 |
1N5376B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 576 |
1N5377B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 577 |
1N5378B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 578 |
1N5379B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 579 |
1N5380B |
Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 120V, Izt =10mA |
Panjit International Inc |
| 580 |
1N5381B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 581 |
1N5382B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 582 |
1N5383B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 583 |
1N5384B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 584 |
1N5385B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 585 |
1N5386 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 586 |
1N5386B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 587 |
1N5387B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 588 |
1N5388B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 589 |
1N5415 |
50 V rectifier 5.0 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 590 |
1N5416 |
100 V rectifier 5.0 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 591 |
1N5417 |
200 V rectifier 5.0 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 592 |
1N5418 |
400 V rectifier 5.0 A forward current, 150 ns recovery time |
Voltage Multipliers |
| 593 |
1N5419 |
500 V rectifier 5.0 A forward current, 250 ns recovery time |
Voltage Multipliers |
| 594 |
1N5420 |
600 V rectifier 5.0 A forward current, 400 ns recovery time |
Voltage Multipliers |
| 595 |
1N5523A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 596 |
1N5523B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 597 |
1N5523C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 598 |
1N5535A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 15.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 599 |
1N5535B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 15.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 600 |
1N5543A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 25.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
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