| No. |
Part Name |
Description |
Manufacturer |
| 601 |
1N5543B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 25.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 602 |
1N5550 |
200 V rectifier 5.0 A forward current, 2000 ns recovery time |
Voltage Multipliers |
| 603 |
1N5551 |
400 V rectifier 5.0 A forward current, 2000 ns recovery time |
Voltage Multipliers |
| 604 |
1N5552 |
600 V rectifier 5.0 A forward current, 2000 ns recovery time |
Voltage Multipliers |
| 605 |
1N5553 |
800 V rectifier 5.0 A forward current, 2000 ns recovery time |
Voltage Multipliers |
| 606 |
1N5554 |
1000 V rectifier 5.0 A forward current, 2000 ns recovery time |
Voltage Multipliers |
| 607 |
1N5740B |
15.0V Voltage Reference Diode |
Philips |
| 608 |
1N5757B |
75.0V Voltage Reference Diode |
Philips |
| 609 |
1N5946 |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 610 |
1N5946A |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 611 |
1N5946C |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 612 |
1N5946D |
1.5 W, silicon zener diode. Zener voltage 75 V. Test current 5.0 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 613 |
1N6373 |
5.00V; 160A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 614 |
1N6377 |
15.00V; 60A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 615 |
1N6381 |
45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 616 |
1N6385 |
15.00V; 60A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 617 |
1N6389 |
45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 618 |
1N754 |
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). |
Fairchild Semiconductor |
| 619 |
1N76 |
Silicon Diode - Microwave X-band Detector f=9,375 MHz, Vo=5.0mV to 16mV |
Motorola |
| 620 |
1N76A |
Silicon Diode - Microwave X-band Detector f=9,375 MHz, Vo=5.0mV to 16mV |
Motorola |
| 621 |
1N914 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
| 622 |
1N914 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
| 623 |
1N959 |
0.5W, silicon zener diode. Zener voltage 8.2V. Test current 15.0mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 624 |
1N959A |
0.5W, silicon zener diode. Zener voltage 8.2V. Test current 15.0mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 625 |
1N965 |
15.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 626 |
1N965 |
500 mW silicon planar zener diode. Max zener voltage 15.0 V. |
Fairchild Semiconductor |
| 627 |
1N965A |
15.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 628 |
1N965B |
15.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 629 |
1PMT5.0A |
Zener Transient Voltage Suppressor POWERMITE® Package |
ON Semiconductor |
| 630 |
1PMT5.0AT1 |
Zener Transient Voltage Suppressor POWERMITE® Package |
ON Semiconductor |
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