No. |
Part Name |
Description |
Manufacturer |
571 |
2N7002 |
N-channel enhancement mode field-effect transistor |
Philips |
572 |
2SJ11 |
Field-effect transistor |
TOSHIBA |
573 |
2SJ12 |
Field-effect transistor |
TOSHIBA |
574 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
575 |
2SJ13 |
Field-effect transistor |
TOSHIBA |
576 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
577 |
2SK0658 |
Field-effect Transistor - Silicon N Channel MOS Type |
Panasonic |
578 |
2SK105 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
579 |
2SK113 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
580 |
2SK152 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
581 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
582 |
2SK363 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
583 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
584 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
585 |
2SK540 |
N-Channel Junction Field-Effect Transistor |
NEC |
586 |
3N124 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
587 |
3N124 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
588 |
3N125 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
589 |
3N125 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
590 |
3N126 |
N-Channel silicon annular tetrode-connected field-effect transistor |
Motorola |
591 |
3N126 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
592 |
3N128 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
593 |
3N128 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
594 |
3N128 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
595 |
3N138 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
596 |
3N138 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
597 |
3N139 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
598 |
3N139 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
599 |
3N139 |
MOS Field-Effect Transistor N-Channel |
RCA Solid State |
600 |
3N140 |
N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor |
Motorola |
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