| No. |
Part Name |
Description |
Manufacturer |
| 631 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 632 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 633 |
3N156A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 634 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 635 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 636 |
3N157 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 637 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 638 |
3N157A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 639 |
3N157A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 640 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 641 |
3N158 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 642 |
3N158 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 643 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 644 |
3N158A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
| 645 |
3N158A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 646 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 647 |
3N159 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 648 |
3N159 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 649 |
3N159 |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz |
RCA Solid State |
| 650 |
3N160 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
| 651 |
3N160 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 652 |
3N161 |
P-Channel FET (Field-Effect Transistor) |
Motorola |
| 653 |
3N161 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 654 |
3N163 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 655 |
3N164 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 656 |
3N169 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 657 |
3N170 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 658 |
3N171 |
N-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 659 |
3N174 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 660 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
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