No. |
Part Name |
Description |
Manufacturer |
571 |
BFQ85 |
Epitaxial planar NPN transistor, intended for common-emitter, high gain, wide band application up to 1.5GHz |
SGS-ATES |
572 |
BFR64 |
NPN silicon multi-emitter transistor in a capstan envelope |
Philips |
573 |
BFR65 |
NPN multi-emitter silicon transistor in a capstan envelope |
Philips |
574 |
BFS22 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
575 |
BFS23 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz transmitters at 28 V supply voltage |
VALVO |
576 |
BFT95H |
Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz |
SGS-ATES |
577 |
BFW16A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
578 |
BFW17 |
Silicon NPN epitaxial planar RF transistor of the multi-emitter design |
ICCE |
579 |
BFW17A |
NPN silicon multi-emitter transistor with the collector coneected to the case |
Philips |
580 |
BFW30 |
NPN multi-emitter high-frequency transistor |
Philips |
581 |
BFW46 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
582 |
BFW47 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
583 |
BFW92 |
Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz |
SGS-ATES |
584 |
BFY88 |
Silicon NPN epitaxial planar RF transistor designed for use in UHF amplifier stages, emitter grounded input stages and oscillating mixer stages |
AEG-TELEFUNKEN |
585 |
BGX7100HN |
Transmitter IQ modulator |
NXP Semiconductors |
586 |
BGX7101HN |
Transmitter IQ modulator |
NXP Semiconductors |
587 |
BL-23G |
Emitter for Optical Fiber(GaAlAs) |
Kodenshi Corp |
588 |
BL-23G |
Emitter for Optical Fiber(GaAlAs) |
Kondenshi Corp |
589 |
BLF146 |
RF Power MOSFET intended for use in professional transmitters in the HF range |
Philips |
590 |
BLV90SL |
UHF Power NPN Transistor designed for use in mobile radio transmitters in the 900 MHz band |
Philips |
591 |
BLY37 |
Silicon NPN planar epitaxial transistor for power amplifiers in 470 MHz transmitters at 28 V supply voltage |
VALVO |
592 |
BLY38 |
Silicon NPN planar epitaxial transistor for driver stages in 470 MHz transmitters at 13.8 V supply voltage |
VALVO |
593 |
BLY53 |
Silicon NPN planar epitaxial transistor for power amplifiers in 470 MHz transmitters at 13.8 V supply voltage |
VALVO |
594 |
BLY57 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
595 |
BLY58 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
596 |
BLY59 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
597 |
BLY60 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
598 |
BLY76 |
Silicon NPN planar epitaxial transistor for driver stages in 470 MHz transmitters at 28 V supply |
VALVO |
599 |
BLY87 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
600 |
BLY88 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
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