| No. |
Part Name |
Description |
Manufacturer |
| 661 |
BSS82B |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 662 |
BSS82C |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 663 |
BSY79 |
NPN silicon epitaxy planar transistor with high collector-emitter voltage, suitable as a driver transistor for number display glow tubes |
ITT Semiconductors |
| 664 |
BT8222EPFE |
ATM transmitter/receiver with UTOPIA interface |
Conexant |
| 665 |
BT8222EPFF |
ATM transmitter/receiver with UTOPIA interface |
Conexant |
| 666 |
BU17101AKV-M |
24bit Clockless Link™ Transmitter |
ROHM |
| 667 |
BU17101AKV-ME2 |
24bit Clockless Link™ Transmitter |
ROHM |
| 668 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 669 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 670 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 671 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 672 |
BU7988KVT |
56bit LVDS Trabsmitter 56:8 Serializer |
ROHM |
| 673 |
BU8254GUW |
35bit LVDS Trabsmitter 35:5 Serializer |
ROHM |
| 674 |
BU8254GUW-E2 |
35bit LVDS Trabsmitter 35:5 Serializer |
ROHM |
| 675 |
BU8254KVT |
35bit LVDS Trabsmitter 35:5 Serializer |
ROHM |
| 676 |
BU8254KVT-E2 |
35bit LVDS Trabsmitter 35:5 Serializer |
ROHM |
| 677 |
BU90T81 |
27bit LVDS Trabsmitter 27:4 Serializer |
ROHM |
| 678 |
BU90T81-E2 |
27bit LVDS Trabsmitter 27:4 Serializer |
ROHM |
| 679 |
BU90T82 |
27bit LVDS Dual-out Transmitter |
ROHM |
| 680 |
BU90T82-ZE2 |
27bit LVDS Dual-out Transmitter |
ROHM |
| 681 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
| 682 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 683 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 684 |
BUT14 |
25A NPN silicon power darlington transistor with BASE-EMITTER speedup diode 850V 175W SWITCHMODE series |
Motorola |
| 685 |
BUT15 |
20A NPN silicon power darlington transistor with BASE-EMITTER speedup diode 1000V 175W SWITCHMODE series |
Motorola |
| 686 |
BUT33-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode |
ON Semiconductor |
| 687 |
BUT35 |
40A NPN silicon power darlington transistor with BASE-EMITTER speedup diode 1000V 250W SWITCHMODE series |
Motorola |
| 688 |
BZW20 |
Transistor with integrated base emitter resistance and a Zener diode, marking TZ |
Siemens |
| 689 |
C62702-C748 |
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 690 |
C62702-C853 |
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
Siemens |
| | | |
