No. |
Part Name |
Description |
Manufacturer |
5791 |
2N4987 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
5792 |
2N4988 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
5793 |
2N4989 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
5794 |
2N4990 |
Planar monolithic silicon unilateral switch. 30V, 1A. |
General Electric Solid State |
5795 |
2N4991 |
Planar monolithic silicon bilateral transistor. 1A. |
General Electric Solid State |
5796 |
2N4992 |
Planar monolithic silicon bilateral transistor. 1A. |
General Electric Solid State |
5797 |
2N5038 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
5798 |
2N5039 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
5799 |
2N5060 |
Reverse Blocking Triode Thyristor (SCR) TO92 EPOXY PACKAGE |
Transitron Electronic |
5800 |
2N5061 |
Reverse Blocking Triode Thyristor (SCR) TO92 EPOXY PACKAGE |
Transitron Electronic |
5801 |
2N5062 |
Reverse Blocking Triode Thyristor (SCR) TO92 EPOXY PACKAGE |
Transitron Electronic |
5802 |
2N5063 |
Reverse Blocking Triode Thyristor (SCR) TO92 EPOXY PACKAGE |
Transitron Electronic |
5803 |
2N5064 |
Sensitive SCRs |
Teccor Electronics |
5804 |
2N5064 |
Reverse Blocking Triode Thyristor (SCR) TO92 EPOXY PACKAGE |
Transitron Electronic |
5805 |
2N5065 |
400 V, 0.8 A sensitive SCR |
Teccor Electronics |
5806 |
2N5086 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
5807 |
2N5086 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
5808 |
2N5087 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
5809 |
2N5088 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
5810 |
2N5089 |
SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
5811 |
2N5089 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
5812 |
2N5172 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
5813 |
2N5179 |
NPN SILICON RF SMALL SIGNAL TRANSISTOR |
Micro Electronics |
5814 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
5815 |
2N5209 |
NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
5816 |
2N5210 |
NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
Micro Electronics |
5817 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
5818 |
2N5225 |
NPN SILICON TRANSISTOR |
Micro Electronics |
5819 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
5820 |
2N5232 |
NPN SILICON TRANSISTOR |
Micro Electronics |
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