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Datasheets for ELE

Datasheets found :: 148122
Page: | 193 | 194 | 195 | 196 | 197 | 198 | 199 | 200 | 201 |
No. Part Name Description Manufacturer
5881 2N5490 Silicon N-P-N VERSAWATT transistor. 60V, 50W. General Electric Solid State
5882 2N5491 Silicon N-P-N VERSAWATT transistor. 60V, 50W. General Electric Solid State
5883 2N5492 Silicon N-P-N VERSAWATT transistor. 75V, 50W. General Electric Solid State
5884 2N5493 Silicon N-P-N VERSAWATT transistor. 75V, 50W. General Electric Solid State
5885 2N5494 Silicon N-P-N VERSAWATT transistor. 60V, 50W. General Electric Solid State
5886 2N5495 Silicon N-P-N VERSAWATT transistor. 60V, 50W. General Electric Solid State
5887 2N5496 Silicon N-P-N VERSAWATT transistor. 90V, 50W. General Electric Solid State
5888 2N5497 Silicon N-P-N VERSAWATT transistor. 90V, 50W. General Electric Solid State
5889 2N5550 High Voltage Transistor Korea Electronics (KEC)
5890 2N5550 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
5891 2N5550 NPN EPITAXIAL SILICON TRANSISTOR Samsung Electronic
5892 2N5550S High Voltage Transistor Korea Electronics (KEC)
5893 2N5551 High Voltage Transistor Korea Electronics (KEC)
5894 2N5551 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
5895 2N5551C High Voltage Transistor Korea Electronics (KEC)
5896 2N5551S High Voltage Transistor Korea Electronics (KEC)
5897 2N5551SC High Voltage Transistor Korea Electronics (KEC)
5898 2N5629 Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. General Electric Solid State
5899 2N5630 Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. General Electric Solid State
5900 2N5631 Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. General Electric Solid State
5901 2N5671 High-current, high-power, high-speed silicon N-P-N planar transistor. General Electric Solid State
5902 2N5672 High-current, high-power, high-speed silicon N-P-N planar transistor. General Electric Solid State
5903 2N5754 2.5-A silicon triac. Voltage(typ) 100 V. General Electric Solid State
5904 2N5755 2.5-A silicon triac. Voltage(typ) 200 V. General Electric Solid State
5905 2N5756 2.5-A silicon triac. Voltage(typ) 400 V. General Electric Solid State
5906 2N5757 2.5-A silicon triac. Voltage(typ) 600 V. General Electric Solid State
5907 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR Micro Electronics
5908 2N5781 Silicon P-N-P epitaxial-base transistor. -80V, 10W. General Electric Solid State
5909 2N5782 Silicon P-N-P epitaxial-base transistor. -65V, 10W. General Electric Solid State
5910 2N5783 Silicon P-N-P epitaxial-base transistor. -45V, 10W. General Electric Solid State


Datasheets found :: 148122
Page: | 193 | 194 | 195 | 196 | 197 | 198 | 199 | 200 | 201 |



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