No. |
Part Name |
Description |
Manufacturer |
5791 |
Q62702-F884 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
5792 |
Q62702-F885 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
5793 |
Q62702-F976 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
5794 |
Q62702-F977 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
5795 |
Q62702-G38 |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
5796 |
Q62702-S534 |
PNP Silicon AF and Switching Transistors (For general AF applications High breakdown voltage) |
Siemens |
5797 |
Q62702-S535 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
5798 |
Q62702-X104 |
Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
Siemens |
5799 |
Q62702-X105 |
Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
Siemens |
5800 |
Q62702-X116 |
Silicon PIN Diodes (High-speed switching Phase shifting up to 10 GHz Power splitter) |
Siemens |
5801 |
Q62702A1173 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching) |
Siemens |
5802 |
Q62702A1176 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection) |
Siemens |
5803 |
Q62702A674 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching) |
Siemens |
5804 |
Q62702X165 |
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches) |
Siemens |
5805 |
Q62702X166 |
HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches) |
Siemens |
5806 |
QPC8010Q |
5 - 6000 MHz General Purpose Automotive SPDT Wideband Switch |
Qorvo |
5807 |
RCA-2N5262 |
Silicon NPN High-Speed Switching Transistor |
RCA Solid State |
5808 |
RM100 |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5809 |
RM100C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5810 |
RM100CA |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5811 |
RM100CA-XXF |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5812 |
RM100CA/C1A-XXF |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
5813 |
RM100HA-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5814 |
RM20 |
HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5815 |
RM200DA-20F |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5816 |
RM200DA-20F |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
5817 |
RM200DA-24F |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
5818 |
RM200DA-24F |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5819 |
RM200HA-20F |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
5820 |
RM200HA-24F |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
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