| No. |
Part Name |
Description |
Manufacturer |
| 5851 |
RM50HG-12S |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) |
Mitsubishi Electric Corporation |
| 5852 |
RM50HG-12S |
MITSUBISHI FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
| 5853 |
RM50HG-12S |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE |
Mitsubishi Electric Corporation |
| 5854 |
RM600DY-66S |
HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 5855 |
RN1241 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 5856 |
RN1242 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 5857 |
RN1243 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 5858 |
RN1244 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 5859 |
RN1301 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 5860 |
RN1302 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 5861 |
RN1303 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 5862 |
RN1304 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 5863 |
RN1305 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 5864 |
RN1306 |
Transistor Silicon NPN Epitaxial Type (PCT Process) For Muting and Switching Applications |
TOSHIBA |
| 5865 |
RN1441 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications |
TOSHIBA |
| 5866 |
RN1442 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications |
TOSHIBA |
| 5867 |
RN1443 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications |
TOSHIBA |
| 5868 |
RN1444 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications |
TOSHIBA |
| 5869 |
RN1544 |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) For use in Muting and Switching Applications. |
TOSHIBA |
| 5870 |
RN2357 |
Transistor Silicon PNP Epitaxial Type (PCT Process) Driver Circuit, Inverter Circuit, and Switching Applications |
TOSHIBA |
| 5871 |
ROL110 |
Photo Treshold Switch |
CCSIT-CE |
| 5872 |
ROS225 |
pnp epitaxial planar silicon transistor for very high speed switching applications |
ICCE |
| 5873 |
ROS525 |
npn epitaxial-planar silicon transistor for very high speed switching applications |
ICCE |
| 5874 |
ROS865 |
Epitaxial planar silicon NPN transistor for high speed switching applications |
ICCE |
| 5875 |
S1DR |
200 V, 1 A high power density, standard switching time PN-rectifier |
Nexperia |
| 5876 |
S6785G |
HIGH SPEED THYRISTOR SILICON PLANAR TYPE HIGH SPEED SWITCHING AND CONTROL APPLICATIONS |
TOSHIBA |
| 5877 |
SA01 |
MITSUBISHI SEMICONDUCTOR (HIGH-SPEED SWITCHING THYRISTOR ARRAY) THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER |
Mitsubishi Electric Corporation |
| 5878 |
SA02 |
MITSUBISHI SEMICONDUCTOR (HIGH-SPEED SWITCHING THYRISTOR ARRAY) THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER |
Mitsubishi Electric Corporation |
| 5879 |
SA04 |
MITSUBISHI SEMICONDUCTOR (HIGH-SPEED SWITCHING THYRISTOR ARRAY) THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER |
Mitsubishi Electric Corporation |
| 5880 |
SA07 |
MITSUBISHI SEMICONDUCTOR (HIGH-SPEED SWITCHING THYRISTOR ARRAY) THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER |
Mitsubishi Electric Corporation |
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