Datasheets for ELECTRO

Datasheets found :: 200109

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No.	Part Name	Description	Manufacturer
5851	2SC2964	Silicon High Speed Power Transistor	Fujitsu Microelectronics
5852	2SC2964	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5853	2SC2965	Silicon High Speed Power Transistor	Fujitsu Microelectronics
5854	2SC2965	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5855	2SC3044	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5856	2SC3044A	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5857	2SC3045	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5858	2SC3046	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5859	2SC3052	LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE	Isahaya Electronics Corporation
5860	2SC3053	150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710	Isahaya Electronics Corporation
5861	2SC3055	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5862	2SC3056	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5863	2SC3056A	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5864	2SC3057	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5865	2SC3058	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5866	2SC3058A	Silicon High Speed Power NPN Transistor	Fujitsu Microelectronics
5867	2SC3059	Silicon High Speed Power Transistor	Fujitsu Microelectronics
5868	2SC3060	Silicon High Speed Power Transistor	Fujitsu Microelectronics
5869	2SC3061	Silicon High Speed Power Transistor	Fujitsu Microelectronics
5870	2SC3178	Silicon High Speed Power Transistor	Fujitsu Microelectronics
5871	2SC3198	Transistors	Korea Electronics (KEC)
5872	2SC3198L	SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)	Korea Electronics (KEC)
5873	2SC3200	SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)	Korea Electronics (KEC)
5874	2SC3201	SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)	Korea Electronics (KEC)
5875	2SC3202	SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)	Korea Electronics (KEC)
5876	2SC3202	SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)	Korea Electronics (KEC)
5877	2SC3203	SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)	Korea Electronics (KEC)
5878	2SC3206	SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS)	Korea Electronics (KEC)
5879	2SC3242	900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282	Isahaya Electronics Corporation
5880	2SC3242A	900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A	Isahaya Electronics Corporation

Datasheets found :: 200109

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