| No. |
Part Name |
Description |
Manufacturer |
| 5911 |
2SC4258 |
FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION |
Isahaya Electronics Corporation |
| 5912 |
2SC4356 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5913 |
2SC4357 |
500mW SMD NPN transistor, maximum rating: 60V Vceo, 2A Ic, 55 to 300 hFE. |
Isahaya Electronics Corporation |
| 5914 |
2SC4483 |
NPN Epitaxial Planar Silicon Transistor Low-Frequency Amplifier, Electronic Governor Applications |
SANYO |
| 5915 |
2SC5168 |
SILICON NPN DUAL TRANSISTOR |
Isahaya Electronics Corporation |
| 5916 |
2SC5169 |
DUAL TRANSISTOR |
Isahaya Electronics Corporation |
| 5917 |
2SC5209 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5918 |
2SC5210 |
500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE. |
Isahaya Electronics Corporation |
| 5919 |
2SC5211 |
SILICON NPN TRANSISOR |
Isahaya Electronics Corporation |
| 5920 |
2SC5212 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5921 |
2SC5213 |
2SC5213 |
Isahaya Electronics Corporation |
| 5922 |
2SC5214 |
For Low Frequency Amplify Application Silicon Npn Epitaxial Type |
Isahaya Electronics Corporation |
| 5923 |
2SC536 |
TRANSISTOR (NPN) |
WEJ Electronic |
| 5924 |
2SC5383 |
125mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 150 to 800 hFE. |
Isahaya Electronics Corporation |
| 5925 |
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. |
Isahaya Electronics Corporation |
| 5926 |
2SC5395 |
SILICON NPN EPITAXIAL TYPE TRANSISTOR |
Isahaya Electronics Corporation |
| 5927 |
2SC5396 |
SILICON NPN EPITAXIAL TYPE TRANSISTOR |
Isahaya Electronics Corporation |
| 5928 |
2SC5397 |
Silicon NPN epitaxial planar type |
Isahaya Electronics Corporation |
| 5929 |
2SC5398 |
For Llow Frequency Amplifty Application Silicom NPN Epitaxial Type Micro(Frame type) |
Isahaya Electronics Corporation |
| 5930 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 5931 |
2SC5482 |
FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 5932 |
2SC5484 |
SILICON NPN TRANSISTOR |
Isahaya Electronics Corporation |
| 5933 |
2SC5485 |
FOR HIGH CURRENT APPLICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 5934 |
2SC5486 |
600mW Lead frame NPN transistor, maximum rating: 10V Vceo, 5A Ic, 230 to 600 hFE. |
Isahaya Electronics Corporation |
| 5935 |
2SC5619 |
2SC5619 |
Isahaya Electronics Corporation |
| 5936 |
2SC5620 |
For Low Frequency Amplify Application Sillcon Npn Epitaxial Type |
Isahaya Electronics Corporation |
| 5937 |
2SC5621 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 5938 |
2SC5625 |
SILICON EPITAXIAL |
Isahaya Electronics Corporation |
| 5939 |
2SC5626 |
2SC5626 |
Isahaya Electronics Corporation |
| 5940 |
2SC5636 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
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