No. |
Part Name |
Description |
Manufacturer |
5851 |
PTF191601E |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz |
Infineon |
5852 |
PTF210301 |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
5853 |
PTF210301A |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
5854 |
PTF210301E |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz |
Infineon |
5855 |
PTF210451 |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
Infineon |
5856 |
PTF210451E |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz |
Infineon |
5857 |
PTF210901 |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
5858 |
PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz |
Infineon |
5859 |
PTF211301 |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
5860 |
PTF211301A |
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz |
Infineon |
5861 |
PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
5862 |
PTF211802A |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
5863 |
PTF211802E |
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz |
Infineon |
5864 |
Q62702-F182 |
N-Channel junction field-Effect Transistors |
Siemens |
5865 |
Q62702-F205 |
N-Channel junction field-Effect Transistors |
Siemens |
5866 |
Q62702-F209 |
N-Channel junction field-Effect Transistors |
Siemens |
5867 |
Q62702-F219 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
5868 |
Q62702-F236 |
N-Channel junction field-Effect Transistors |
Siemens |
5869 |
Q62702-F250 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
5870 |
Q62702-F254 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
5871 |
Q62702-F393 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
5872 |
RFH35N08 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5873 |
RFH35N10 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5874 |
RFH45N05 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5875 |
RFH45N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5876 |
RFP15N06 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5877 |
RFP15N12 |
N-CHANNEL LOGIC LEVEL POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5878 |
RFP5P12 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5879 |
RFP5P15 |
N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS |
New Jersey Semiconductor |
5880 |
RHY10 |
Hall-effect device measuring axial magnetic field |
Siemens |
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