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Datasheets for FFECT

Datasheets found :: 6734
Page: | 192 | 193 | 194 | 195 | 196 | 197 | 198 | 199 | 200 |
No. Part Name Description Manufacturer
5851 PTF191601E LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz Infineon
5852 PTF210301 LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
5853 PTF210301A LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
5854 PTF210301E LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz Infineon
5855 PTF210451 LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz Infineon
5856 PTF210451E LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz Infineon
5857 PTF210901 LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz Infineon
5858 PTF210901E LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz Infineon
5859 PTF211301 LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
5860 PTF211301A LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz Infineon
5861 PTF211802 LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
5862 PTF211802A LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
5863 PTF211802E LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz Infineon
5864 Q62702-F182 N-Channel junction field-Effect Transistors Siemens
5865 Q62702-F205 N-Channel junction field-Effect Transistors Siemens
5866 Q62702-F209 N-Channel junction field-Effect Transistors Siemens
5867 Q62702-F219 N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Siemens
5868 Q62702-F236 N-Channel junction field-Effect Transistors Siemens
5869 Q62702-F250 N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Siemens
5870 Q62702-F254 N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Siemens
5871 Q62702-F393 N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Siemens
5872 RFH35N08 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
5873 RFH35N10 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
5874 RFH45N05 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
5875 RFH45N06 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
5876 RFP15N06 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
5877 RFP15N12 N-CHANNEL LOGIC LEVEL POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
5878 RFP5P12 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
5879 RFP5P15 N-CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS New Jersey Semiconductor
5880 RHY10 Hall-effect device measuring axial magnetic field Siemens


Datasheets found :: 6734
Page: | 192 | 193 | 194 | 195 | 196 | 197 | 198 | 199 | 200 |



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