| No. |
Part Name |
Description |
Manufacturer |
| 5881 |
RHY11 |
Hall-effect device measuring axial magnetic field |
Siemens |
| 5882 |
RHY15 |
Ferrite Hall-effect device and Hall signal generator |
Siemens |
| 5883 |
RHY15R |
Ferrite Hall-effect device and Hall signal generator |
Siemens |
| 5884 |
RHY17 |
Hall-effect device measuring magnetic field at low temperatures |
Siemens |
| 5885 |
RHY18 |
Hall-effect device measuring magnetic field at low temperatures |
Siemens |
| 5886 |
RHY18-S1 |
Hall-effect device measuring magnetic field at low temperatures |
Siemens |
| 5887 |
RHY19 |
Hall-effect devices for measuring AC und DC magnetic fields |
Siemens |
| 5888 |
RHY20 |
Ferrite Hall-effect device and Hall signal generator |
Siemens |
| 5889 |
ROS01 |
Low power P-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 5890 |
ROS02 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 5891 |
ROS04 |
Low power P-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 5892 |
ROS05 |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 5893 |
ROS05A |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 5894 |
ROS05B |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 5895 |
ROS05C |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 5896 |
ROS05D |
Dual Field-Effect MOS transistor |
CCSIT-CE |
| 5897 |
ROS7N |
N-Channel Junction Field-Effect Transistor |
CCSIT-CE |
| 5898 |
RVM35A1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5899 |
RVM35A2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5900 |
RVM35B1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5901 |
RVM35B2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5902 |
RVM60A1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5903 |
RVM60A2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5904 |
RVM60B1 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5905 |
RVM60B2 |
N-Channel Field-Effect VMOS power transistor |
CCSIT-CE |
| 5906 |
S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): +-20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications |
TOSHIBA |
| 5907 |
S525 |
N-Channel MOS-Fieldeffect Triode/ Depletion Mode |
Vishay |
| 5908 |
S525T |
N-Channel MOS‐Fieldeffect Triode, Depletion Mode |
Vishay |
| 5909 |
S525TW |
N-Channel MOS‐Fieldeffect Triode, Depletion Mode |
Vishay |
| 5910 |
S5A1901H02 |
AUDIO EFFECT PROCESSOR |
Samsung Electronic |
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