| No. |
Part Name |
Description |
Manufacturer |
| 5971 |
BSY56 |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 5972 |
BSY56 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
| 5973 |
BSY58 |
Double-diffused epitaxial NPN silicon RF Transistor in planar technology |
TUNGSRAM |
| 5974 |
BSY70 |
Silicon NPN Planar-Epitaxial Very Fast Switching Transistor |
TELEFUNKEN |
| 5975 |
BSY88 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 5976 |
BSY93 |
Silicon NPN epitaxial planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
| 5977 |
BU125S |
Silicon epitaxial planar NPN high voltage transistor |
SGS-ATES |
| 5978 |
BU126 |
NPN silicon multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 5979 |
BU126A |
NPN silicon multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 5980 |
BU326A |
NPN silicon, multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 5981 |
BU326S |
NPN silicon, multiepitaxial transistor |
Mikroelektronikai Vallalat |
| 5982 |
BU326S |
Silicon multiepitaxial biplanar® NPN high voltage power transistor intended for switch-mode CTV applications |
SGS-ATES |
| 5983 |
BU406 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 5984 |
BU406 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 5985 |
BU406 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 5986 |
BU406 |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 5987 |
BU406D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 5988 |
BU406D |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
| 5989 |
BU406H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 5990 |
BU406H |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 5991 |
BU406H |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 5992 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 5993 |
BU406TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 5994 |
BU407 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 5995 |
BU407 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 5996 |
BU407 |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
| 5997 |
BU407 |
SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
| 5998 |
BU407D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 5999 |
BU407H |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 6000 |
BU407H |
330 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| | | |
