| No. |
Part Name |
Description |
Manufacturer |
| 6001 |
BU407H |
Silicon epitaxial planar NPN transistor for use in horizontal TV deflectors |
SGS-ATES |
| 6002 |
BU407HTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 6003 |
BU407TU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 6004 |
BU408 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 6005 |
BU408 |
400 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 6006 |
BU408 |
Silicon epitaxial planar NPN transistor, fast switchingm high voltage for use in TV horizontal deflection |
SGS-ATES |
| 6007 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 6008 |
BU408D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 6009 |
BU409 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
| 6010 |
BU505 |
HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR |
SGS Thomson Microelectronics |
| 6011 |
BU505 |
HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR |
SGS Thomson Microelectronics |
| 6012 |
BU505 |
HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR |
ST Microelectronics |
| 6013 |
BU606 |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 6014 |
BU606 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
| 6015 |
BU606D |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 6016 |
BU606D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 6017 |
BU607 |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 6018 |
BU607 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
| 6019 |
BU607D |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 6020 |
BU607D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 6021 |
BU608 |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 6022 |
BU608 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
| 6023 |
BU608D |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
| 6024 |
BU608D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 6025 |
BU806 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 6026 |
BU806 |
Silicon NPN Planar Epitaxial Darlington Transistor |
IPRS Baneasa |
| 6027 |
BU806 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 6028 |
BU807 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 6029 |
BU807 |
Silicon NPN Planar Epitaxial Darlington Transistor |
IPRS Baneasa |
| 6030 |
BU807 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
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