| No. |
Part Name |
Description |
Manufacturer |
| 601 |
2SK435 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 602 |
2SK439 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 603 |
2SK494 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 604 |
2SK606 |
Silicon N Channel Junction Type |
Panasonic |
| 605 |
2SK608 |
Silicon N Channel Junction Type |
Panasonic |
| 606 |
2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 607 |
2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 608 |
2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 609 |
2SK808 |
Silicon N Channel Power FMOS FET |
Panasonic |
| 610 |
2SK829 |
FAST SWITCHING N CHANNEL SILICON POWER MOSFET |
NEC |
| 611 |
2SK855 |
FAST SWITCHING N CHANNEL SILICON POWER MOSFET |
NEC |
| 612 |
2SK879 |
Field Effect Transistor Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications |
TOSHIBA |
| 613 |
2SK880 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 614 |
2SK881 |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
| 615 |
2SK882 |
Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications |
TOSHIBA |
| 616 |
2SK930 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 617 |
2SK982 |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications |
TOSHIBA |
| 618 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
| 619 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 620 |
3SK0139 |
Silicon N Channel 4-pole MOS Type |
Panasonic |
| 621 |
3SK0169 |
Silicon N Channel 4-pole MOS Type |
Panasonic |
| 622 |
3SK0192 |
Silicon N Channel 4-pole MOS Type |
Panasonic |
| 623 |
3SK142 |
Field-effect Transistors - Silicon N Channel 4-pole MOS Type - For UHF high-gain low-noise amplification |
Panasonic |
| 624 |
3SK186 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 625 |
3SK195 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications FM Tuner Applications |
TOSHIBA |
| 626 |
3SK199 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications |
TOSHIBA |
| 627 |
3SK202 |
Field-effect Transistor - Silicon N Channel 4-pole MOS Type - For VHF band high-gain low-noise amplification |
Panasonic |
| 628 |
3SK207 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications |
TOSHIBA |
| 629 |
3SK225 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications |
TOSHIBA |
| 630 |
3SK226 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications FM Tuner Applications |
TOSHIBA |
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