No. |
Part Name |
Description |
Manufacturer |
631 |
3SK232 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications |
TOSHIBA |
632 |
3SK249 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications |
TOSHIBA |
633 |
3SK256 |
Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications |
TOSHIBA |
634 |
3SK290 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
635 |
3SK295 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
636 |
3SK296 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
637 |
3SK297 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
638 |
3SK298 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
639 |
3SK300 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
640 |
3SK300 |
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
Hitachi Semiconductor |
641 |
3SK309 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
642 |
3SK309 |
GaAs N Channel Dual Gate MES FET UHF RF Amplifier |
Hitachi Semiconductor |
643 |
3SK317 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
644 |
3SK318 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
645 |
3SK319 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
646 |
4AK19 |
Silicon N Channel MOSFET High Speed Power Switching |
Hitachi Semiconductor |
647 |
4AK27 |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
648 |
AUIRFN8458 |
40V Dual N Channel HEXFET Power MOSFET in a PQFN 5 x 6 L package |
International Rectifier |
649 |
AUIRFN8458TR |
40V Dual N Channel HEXFET Power MOSFET in a PQFN 5 x 6 L package |
International Rectifier |
650 |
AUIRFN8459 |
40V Dual N Channel HEXFET Power MOSFET in a PQFN 5 x 6 L package |
International Rectifier |
651 |
AUIRFN8459TR |
40V Dual N Channel HEXFET Power MOSFET in a PQFN 5 x 6 L package |
International Rectifier |
652 |
BF2000 |
Silicon N Channel MOSFET Tetrode |
Siemens |
653 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
654 |
BF245 |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
655 |
BF245A |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
656 |
BF245B |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
657 |
BF245C |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
658 |
BF247 |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
659 |
BF247A |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
660 |
BF247B |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
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