| No. |
Part Name |
Description |
Manufacturer |
| 601 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 602 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 603 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 604 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 605 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 606 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 607 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 608 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 609 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 610 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 611 |
2N697 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 612 |
2N7000A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
| 613 |
2N7002A |
SMOS FET/ Interface and Switching Application |
Korea Electronics (KEC) |
| 614 |
2N705 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 615 |
2N706 |
Silicon NPN epitaxial planar transistor for high speed switching |
AEG-TELEFUNKEN |
| 616 |
2N706 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 617 |
2N706 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 618 |
2N706 |
Transistor, high speed saturated switches |
SGS-ATES |
| 619 |
2N706A |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 620 |
2N706A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 621 |
2N706A |
Transistor, high speed saturated switches |
SGS-ATES |
| 622 |
2N706B |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 623 |
2N708 |
Silicon NPN epitaxial planar transistor for high speed switching and RF circuits |
AEG-TELEFUNKEN |
| 624 |
2N708 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 625 |
2N708 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 626 |
2N708 |
Transistor, high speed saturated switches |
SGS-ATES |
| 627 |
2N708 |
Silicon NPN Planar-Epitaxial HF and switching Transistor |
TELEFUNKEN |
| 628 |
2N709 |
Transistor, high speed saturated switches |
SGS-ATES |
| 629 |
2N709A |
Transistor, high speed saturated switches |
SGS-ATES |
| 630 |
2N711 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
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