| No. |
Part Name |
Description |
Manufacturer |
| 631 |
2N711A |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 632 |
2N711B |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 633 |
2N718A |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 634 |
2N722 |
Transistor, high speed saturated switches |
SGS-ATES |
| 635 |
2N743 |
Transistor, high speed saturated switches |
SGS-ATES |
| 636 |
2N744 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 637 |
2N744 |
Transistor, high speed saturated switches |
SGS-ATES |
| 638 |
2N753 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 639 |
2N753 |
Transistor, high speed saturated switches |
SGS-ATES |
| 640 |
2N768 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 641 |
2N769 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 642 |
2N779A |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 643 |
2N794 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 644 |
2N795 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 645 |
2N796 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 646 |
2N827 |
PNP germanium mesa transistor for high-speed switching applications, TO-18 case |
Motorola |
| 647 |
2N828 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 648 |
2N828A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 649 |
2N829 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 650 |
2N834 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
| 651 |
2N834 |
Transistor, high speed saturated switches |
SGS-ATES |
| 652 |
2N834A |
Transistor, high speed saturated switches |
SGS-ATES |
| 653 |
2N835 |
NPN silicon epitaxial transistor for high-speed switching applications |
Motorola |
| 654 |
2N838 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 655 |
2N846A |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 656 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
| 657 |
2N869A |
Transistor, high speed saturated switches |
SGS-ATES |
| 658 |
2N914 |
Silicon NPN epitaxial planar transistor for high speed switching |
AEG-TELEFUNKEN |
| 659 |
2N914 |
NPN silicon annular transistor for high-speed switching applications |
Motorola |
| 660 |
2N914 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
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