No. |
Part Name |
Description |
Manufacturer |
601 |
2N3904RLRP |
General Purpose Transistors |
ON Semiconductor |
602 |
2N3904RLRP |
General Purpose Transistors |
ON Semiconductor |
603 |
2N3904ZL1 |
General Purpose Transistors |
ON Semiconductor |
604 |
2N3904ZL1 |
General Purpose Transistors |
ON Semiconductor |
605 |
2N3905 |
General Purpose Transistors(PNP Silicon) |
ON Semiconductor |
606 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
607 |
2N3905-D |
General Purpose Transistors PNP Silicon |
ON Semiconductor |
608 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
609 |
2N3906-D |
General Purpose Transistors PNP Silicon |
ON Semiconductor |
610 |
2N3906-G |
General Purpose Transistor, VCBO=-40V, VCEO=-40V, VEBO=-5V, IC=-0.2A |
Comchip Technology |
611 |
2N3906RLRE |
General Purpose Transistors |
ON Semiconductor |
612 |
2N3962 |
PNP silicon Low-Level, Low-Noise type transistor |
ITT Semiconductors |
613 |
2N3963 |
PNP silicon Low-Level, Low-Noise type transistor |
ITT Semiconductors |
614 |
2N3964 |
PNP silicon Low-Level, Low-Noise type transistor |
ITT Semiconductors |
615 |
2N3965 |
PNP silicon Low-Level, Low-Noise type transistor |
ITT Semiconductors |
616 |
2N4032 |
GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
Boca Semiconductor Corporation |
617 |
2N4033 |
GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
Boca Semiconductor Corporation |
618 |
2N4033CSM4 |
HIGH SPEED PNP MEDIUM VOLTAGE TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE |
SemeLAB |
619 |
2N4036 |
PNP general purpose transistor. |
Fairchild Semiconductor |
620 |
2N4037 |
PNP general purpose transistor. |
Fairchild Semiconductor |
621 |
2N4123 |
NPN Silicon General Purpose Transistor 625mW |
Micro Commercial Components |
622 |
2N4123 |
General Purpose Transistors(NPN Silicon) |
ON Semiconductor |
623 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
624 |
2N4123-D |
General Purpose Transistors NPN Silicon |
ON Semiconductor |
625 |
2N4123RLRA |
General Purpose Transistor - NPN |
ON Semiconductor |
626 |
2N4123RLRM |
General Purpose Transistor - NPN |
ON Semiconductor |
627 |
2N4124 |
NPN Silicon General Purpose Transistor 625mW |
Micro Commercial Components |
628 |
2N4124 |
General Purpose Transistor - NPN |
ON Semiconductor |
629 |
2N4124 |
NPN general purpose transistor |
Philips |
630 |
2N4124 |
General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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