| No. |
Part Name |
Description |
Manufacturer |
| 721 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 722 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
| 723 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
| 724 |
2N5920 |
2W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Microwave Transistor |
RCA Solid State |
| 725 |
2N6080 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 726 |
2N6081 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 727 |
2N6081 |
NPN transistor designed for VHF FM mobile and marine transmitters 12.5V 15W |
SGS Thomson Microelectronics |
| 728 |
2N6083 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 729 |
2N6084 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
| 730 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 731 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 732 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 733 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 734 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 735 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 736 |
2N6257 |
TO-3 Power Package Transistors (NPN) |
Unknow |
| 737 |
2N6338A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 738 |
2N6339A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 739 |
2N6340A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 740 |
2N6341A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 741 |
2N6371HV |
TO-3 Power Package Transistors (NPN) |
Unknow |
| 742 |
2N6436A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 743 |
2N6437A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 744 |
2N6438A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 745 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 746 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 747 |
2N6515 |
High Voltage Transistors |
ON Semiconductor |
| 748 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 749 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
| 750 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
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