No. |
Part Name |
Description |
Manufacturer |
601 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
602 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
603 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
604 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
605 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
606 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
607 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
608 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
609 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
610 |
BD244A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
611 |
BD244B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
612 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
613 |
BF155 |
Epitaxial planar NPN transistor designed for UHF amplifier and mixer-oscillator applications up to 900MHz |
SGS-ATES |
614 |
BF158 |
Silicon Planar NPN RF transistor designed for use as IF amplifier in TV receivers |
SGS-ATES |
615 |
BF222 |
Epitaxial planar NPN transistor, designed for tuners of FM receivers, and features low noise, high gain and excelent forward AGC |
SGS-ATES |
616 |
BF272A |
Epitaxial planar PNP transistor designed for RF stages of UHF-VHF tuners, high gain, low feedback capacitance, low noise |
SGS-ATES |
617 |
BF272S |
Epitaxial planar PNP transistor designed for UHF-VHF low noise amplifier, high gain, low feedback capacitance |
SGS-ATES |
618 |
BF316A |
Epitaxial planar PNP transistor designed for use as oscillator-mixer in TV tuners |
SGS-ATES |
619 |
BFG34 |
Silicon-epitaxial NPN transistor designed for wideband application in CATV and MATV |
Philips |
620 |
BFG90A |
Silicon planar epitaxial NPN transistor, designed for wideband application in CATV and MATV systems up to 2GHz |
Philips |
621 |
BFQ65 |
NPN microwave NPN transistor, designed for use in the GHz range, very low noise |
Philips |
622 |
BFR36 |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
623 |
BFR36A |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
624 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
625 |
BFR91H |
Epitaxial planar NPN transistor, designed for VHF-UHF wide-band application |
SGS-ATES |
626 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
627 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
628 |
BFW92 |
Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz |
SGS-ATES |
629 |
BFX17 |
Epitaxial planar NPN transistor designed for high-voltage, high-current class C VHF amplifier applications |
SGS-ATES |
630 |
BFX89 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
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