| No. |
Part Name |
Description |
Manufacturer |
| 631 |
BFY88 |
Silicon NPN epitaxial planar RF transistor designed for use in UHF amplifier stages, emitter grounded input stages and oscillating mixer stages |
AEG-TELEFUNKEN |
| 632 |
BFY90 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| 633 |
BLV90SL |
UHF Power NPN Transistor designed for use in mobile radio transmitters in the 900 MHz band |
Philips |
| 634 |
BN1A4M |
The BN1A4M is designed for use in medium speed switching circuit. |
NEC |
| 635 |
BN1F4M |
The BN1F4M is designed for use in medium speed switching circuit. |
NEC |
| 636 |
BSW11 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits |
AEG-TELEFUNKEN |
| 637 |
BSW12 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits. Electrically the BSW12 resembles 2N708 |
AEG-TELEFUNKEN |
| 638 |
BU205 |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 2.5Adc, PD = 36W. |
USHA India LTD |
| 639 |
BU208 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 640 |
BU208A |
NPN, horizontal deflection transistor. Designed for use in televisions. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 12.5W. |
USHA India LTD |
| 641 |
BU208D |
5A NPN silicon power transistor 1500V 60V designed for TV horizontal deflection, with integrated damper diode |
Motorola |
| 642 |
BU209 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 643 |
BU209A |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 644 |
BU508A |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 645 |
BU508D |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 646 |
BU7150NUV |
Headphone Amplifier Designed for 0.93V Low Voltage Operation |
ROHM |
| 647 |
BU7150NUV-E2 |
Headphone Amplifier Designed for 0.93V Low Voltage Operation |
ROHM |
| 648 |
BUV11N |
NPN Silicon power metal transistor 20A, designed for high speed, high current, high power applications |
Motorola |
| 649 |
BX DIELECTRIC |
Monolithic Ceramic Chip Capacitors, Designed for Excellent Temperature Voltage Coefficient, Excellent Aging Characteristics |
Vishay |
| 650 |
C1048 |
DDS - EP13 - Designed for use with Level One LXT400 and LXT441 Transceiver |
CoEv Inc |
| 651 |
C7043 |
CCD multichannel detector head. Designed for front-illuminated CCD area image sensor |
Hamamatsu Corporation |
| 652 |
C7044 |
CCD multichannel detector head. Designed for front-illuminated CCD area image sensor |
Hamamatsu Corporation |
| 653 |
C8060-01 |
Supply voltage: 0.5-7V; InGaAs multichannel detector head. Desined for InGaAs linear image sensor |
Hamamatsu Corporation |
| 654 |
C8061-01 |
Supply voltage: 0.5-7V; InGaAs multichannel detector head. Desined for InGaAs linear image sensor |
Hamamatsu Corporation |
| 655 |
CA3002 |
IF amplifier designed for use in communication equipment |
RCA Solid State |
| 656 |
CA3004 |
RF Amplifier designed for use in communications equipment |
RCA Solid State |
| 657 |
CA3005 |
RF Amplifier designed for use in communications equipment up to 100MHz |
RCA Solid State |
| 658 |
CA3006 |
RF Amplifier designed for use in communications equipment up to 100MHz |
RCA Solid State |
| 659 |
CA3007 |
AF Amplifier designed for use in Sound Systems and Communication Equipment |
RCA Solid State |
| 660 |
CC1100 |
Highly Integrated MultiCh RF Transceiver Designed for Low-Power Wireless Apps |
Texas Instruments |
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